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AP09N90W Advanced Power Electronics Corp. Repetitive Avalanche Rated Fast Switching Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 1.2 8.6A G S Description AP09N90 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO- 3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. G D TO-3P S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 900 30 8.6 5 30 240 1.92 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 92 5.2 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.52 40 Unit /W /W Data & specifications subject to change without notice 200714032 AP09N90W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 900 2 - Typ. 0.67 11.5 67.1 17 19.9 25.8 10.3 305.2 536 221 51 Max. Units 1.2 4 10 100 100 120 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=4.5A VDS=900V, VGS=0V VDS=720V, VGS=0V VGS= 30V ID=8.6A VDS=540V VGS=10V VDD=450V ID=5A RG=10,VGS=10V RD=90 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 4087 6000 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25 , IAS=5.2A. 3.Pulse width <300us , duty cycle <2%. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 8.6 30 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=8.6A, VGS=0V - AP09N90W 21 10 T C =25 C ID , Drain Current (A) o 10V 5.5V 8 T C =150 o C 10V 5.0V 4.5V 14 ID , Drain Current (A) 6 5.0V 4 7 V GS = 4.0 V 2 V GS =10V 0 0 10 20 30 40 0 0 12 24 36 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.3 3 I D =4.5A V GS =10V Normalized BVDSS (V) Normalized RDS(ON) 1.1 2 0.9 1 0.7 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C ) Fig 3. Normalized BV DSS v.s. Junction Fig 4. Normalized On-Resistance 100 4 10 3 IS (A) T j = 150 o C T j = 25 o C 1 VGS(th) (V) 2 1 1.4 1.6 0.1 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP09N90W f=1.0MHz 14 10000 I D =8.6A 12 Ciss VGS , Gate to Source Voltage (V) 10 V DS =180V V DS =360V V DS =540V C (pF) 8 Coss 100 6 Crss 4 2 0 0 10 20 30 40 50 60 70 80 90 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10us 10 Normalized Thermal Response (Rthjc) Duty Factor = 0.5 0.2 ID (A) 100us 1ms 1 0.1 0.1 0.05 PDM 0.02 t T 10ms T C =25 o C Single Pulse 0.1 0.01 Single Pulse DC Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS 10% VGS td(on) tr td(off) tf Charge Q QGD Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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